Iranian Journal of Materials Science and Engineering

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Taleblou M, Borhani E, Yarmand B, Kolahi A. Structural and Optoelectrical Properties of Single Phase SnS2 Thin Films at Various Substrate Temperatures by Spray Pyrolysis. IJMSE 2018; 15 (3) :43-52
URL: http://ijmse.iust.ac.ir/article-1-1069-en.html

Thin films of SnS₂ were prepared, as the absorber layer in solar cells, using an aqueous solution of SnCl₄ and thiourea by spray pyrolysis technique. Effect of the Substrate temperature on the properties of these thin films was studied. Investigation via XRD showed the formation of polycrystalline SnS₂ along (001) in all layers; there was no sign of other unwanted phases. With increasing of substrate temperature from 325 to 400 ⁰C, the crystallinity of the sample was improved, after that, it deteriorated the crystallinity. Layers had granular morphology and Valley- Hills topography. UV-VIS spectra revealed that the transmittance of all layers was lower than 40% in the visible region and the band gap reduced from 2.8 to 2.55 eV with increment in temperature from 350 to 400 ⁰C. Photoluminescence spectra of the prepared film, which was formed at 400 ⁰C showed a dominant peak at 530 nm, caused recombination of excitons. The least electrical resistivity of the SnS₂ thin film prepared at 400 ⁰C in dark and light environment were 4.6 ×10 ^-3 Ωcm and 0.65×10 ^-3 Ωcm, respectively; which demonstrated 400 ⁰C was the optimum temperature in point of optoelectrical properties in the SnS₂ thin film.